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Measuring Strain Caused by Ion Implantation in Gan
AuthID
P-00Q-F2N
6
Author(s)
Mendes, P
·
Lorenz, K
·
Alves, E
·
Schwaiger, S
·
Scholz, F
·
Magalhaes, S
Document Type
Article
Year published
2019
Published
in
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,
ISSN: 1369-8001
Volume: 98, Pages: 95-99 (5)
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Scopus
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Crossref
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15
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Publication Identifiers
DOI
:
10.1016/j.mssp.2019.04.001
Handle
:
https://hdl.handle.net/10451/49139
Scopus
: 2-s2.0-85063759927
Wos
: WOS:000465188500016
Source Identifiers
ISSN
: 1369-8001
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