Using Modified Bessel Functions for Analysis of Nonlinear Effects in a Mos Transistor Operating in Moderate Inversion

AuthID
P-00Q-GAB
3
Author(s)
Filanovsky, IM
·
Tchamov, NT
Document Type
Article
Year published
2019
Published
in IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, ISSN: 1549-8328
Volume: 66, Issue: 5, Pages: 1897-1907 (11)
Conference
Ieee International Symposium on Circuits and Systems (Iscas), Date: MAY 27-30, 2018, Location: Florence, ITALY, Sponsors: IEEE, Politecnico Torino, Analog Devices, CADENCE, Texas Instruments, AiCTX, Springer Nat, River Publishers, Nat Electron, CAS
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Publication Identifiers
SCOPUS: 2-s2.0-85064656552
Wos: WOS:000465305700022
Source Identifiers
ISSN: 1549-8328
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