Influence of Hydrogen Implantation on Emission from the Silicon Vacancy in 4H-Sic

AuthID
 P-00R-TSF
4
Author(s)
Bathen, ME
·
Galeckas, A
·
Vines, L
Document Type
Article
Year published
2020
Published
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 127, Issue: 8
Indexing
Wos®
Scopus®
Crossref®16
Google Scholar®
Publication Identifiers
Scopus: 2-s2.0-85080072219
Wos: WOS:000519624400001
Source Identifiers
ISSN: 0021-8979
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