Hfo2-Al2O3 Dielectric Layer for a Performing Metal-Ferroelectric-Insulator-Semiconductor Structure with a Ferroelectric 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)Tio3 Thin Film
AuthID
P-00S-M19
P-00S-M19
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