Two-Terminal Resistive-Switching Memories Based on Liquid Agno3 as Artificial Synapses

AuthID
 P-00W-NTY
3
Author(s)
Silva, A
·
Document Type
Article
Year published
2022
Published
in U.Porto Journal of Engineering, ISSN: 2183-6493
Volume: 8, Issue: 3 Special Issue, Pages: 29-34
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Publication Identifiers
SCOPUS: 2-s2.0-85132844024
Source Identifiers
ISSN: 2183-6493
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