Toggle navigation
Publications
Researchers
Institutions
0
Sign In
Federated Authentication
(Click on the image)
Local Sign In
Password Recovery
Register
Sign In
Publications
Search
Statistics
Modelling the Strain Build-Up in Nitrogen Implanted Tungsten Films on Silicon Substrates
AuthID
P-00Y-GAK
6
Author(s)
Magalhaes, S
·
Mateus, R
·
Dias, M
·
Porosnicu, C
·
Pompilian, OG
·
Alves, E
Document Type
Article
Year published
2023
Published
in
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,
ISSN: 0168-583X
Volume: 537, Pages: 81-87 (7)
Indexing
Wos
®
Google Scholar
®
Metadata
Sources
Publication Identifiers
DOI
:
10.1016/j.nimb.2023.02.006
Wos
: WOS:000995055600001
Source Identifiers
ISSN
: 0168-583X
Export Publication Metadata
Export
×
Publication Export Settings
BibTex
EndNote
APA
Export Preview
Marked List
Add to Marked List
Info
At this moment we don't have any links to full text documens.
×
Select Source
This publication has:
2 records from
ISI
2 records from
SCOPUS
2 records from
DBLP
2 records from
Unpaywall
2 records from
Openlibrary
2 records from
Handle
Please select which records must be used by Authenticus!
×
Preview Publications
© 2024 CRACS & Inesc TEC - All Rights Reserved
Privacy Policy
|
Terms of Service