Radheshyam Rai
AuthID: R-000-NEM
131
TÃTULO: Fermi-level pinning at the polysilicon/metal oxide interface - Part I
AUTORES: Hobbs, CC; Fonseca, LRC; Knizhnik, A; Dhandapani, V; Samavedam, SB; Taylor, WJ; Grant, JM; Dip, LG; Triyoso, DH; Hegde, RI; Gilmer, DC; Garcia, R; Roan, D; Lovejoy, ML; Rai, RS; Hebert, EA; Tseng, HH; Anderson, SGH; White, BE; Tobin, PJ;
PUBLICAÇÃO: 2004, FONTE: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOLUME: 51, NÚMERO: 6
AUTORES: Hobbs, CC; Fonseca, LRC; Knizhnik, A; Dhandapani, V; Samavedam, SB; Taylor, WJ; Grant, JM; Dip, LG; Triyoso, DH; Hegde, RI; Gilmer, DC; Garcia, R; Roan, D; Lovejoy, ML; Rai, RS; Hebert, EA; Tseng, HH; Anderson, SGH; White, BE; Tobin, PJ;
PUBLICAÇÃO: 2004, FONTE: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOLUME: 51, NÚMERO: 6
132
TÃTULO: Fermi-level pinning at the polysilicon metal oxide interface - Part II
AUTORES: Hobbs, CC; Fonseca, LRC; Knizhnik, A; Dhandapani, V; Samavedam, SB; Taylor, WJ; Grant, JM; Dip, LG; Triyoso, DH; Hegde, RI; Gilmer, DC; Garcia, R; Roan, D; Lovejoy, ML; Rai, RS; Hebert, EA; Tseng, HH; Anderson, SGH; White, BE; Tobin, PJ;
PUBLICAÇÃO: 2004, FONTE: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOLUME: 51, NÚMERO: 6
AUTORES: Hobbs, CC; Fonseca, LRC; Knizhnik, A; Dhandapani, V; Samavedam, SB; Taylor, WJ; Grant, JM; Dip, LG; Triyoso, DH; Hegde, RI; Gilmer, DC; Garcia, R; Roan, D; Lovejoy, ML; Rai, RS; Hebert, EA; Tseng, HH; Anderson, SGH; White, BE; Tobin, PJ;
PUBLICAÇÃO: 2004, FONTE: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOLUME: 51, NÚMERO: 6
133
TÃTULO: A new predictor for ground vibration prediction and its comparison with other predictors
AUTORES: Rai, R; Singh, TN;
PUBLICAÇÃO: 2004, FONTE: INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES, VOLUME: 11, NÚMERO: 3
AUTORES: Rai, R; Singh, TN;
PUBLICAÇÃO: 2004, FONTE: INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES, VOLUME: 11, NÚMERO: 3
INDEXADO EM: 
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ORCID
ORCID134
TÃTULO: Five-year-old children's difficulty with false belief when the sought entity is a person
AUTORES: Rai, RS; Mitchell, P;
PUBLICAÇÃO: 2004, FONTE: JOURNAL OF EXPERIMENTAL CHILD PSYCHOLOGY, VOLUME: 89, NÚMERO: 2
AUTORES: Rai, RS; Mitchell, P;
PUBLICAÇÃO: 2004, FONTE: JOURNAL OF EXPERIMENTAL CHILD PSYCHOLOGY, VOLUME: 89, NÚMERO: 2
135
TÃTULO: Structural and dielectric properties of Pb0.9(La1-ySby)0.1(Zr0.65 Ti0.35)0.975O3 ferroelectric ceramics Full Text
AUTORES: Rai, R; Sharma, S; Choudhary, RNP;
PUBLICAÇÃO: 2003, FONTE: Materials Letters, VOLUME: 57, NÚMERO: 22-23
AUTORES: Rai, R; Sharma, S; Choudhary, RNP;
PUBLICAÇÃO: 2003, FONTE: Materials Letters, VOLUME: 57, NÚMERO: 22-23
136
TÃTULO: High K LAON for gate dielectric application
AUTORES: Zhou, HW; Wang, XP; Nguyen, BY; Rai, R; Prabhu, L; Jiang, J; Kaushik, V; Scheaffer, J; Zavala, M; Duda, E; Liu, R; Zonner, S; Hradsky, B; Fejes, P; Theodore, D; Edwards, G; Gregory, R; Wang, R; Yam, H; Yu, J; ...Mais
PUBLICAÇÃO: 2003, FONTE: 2003 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS
AUTORES: Zhou, HW; Wang, XP; Nguyen, BY; Rai, R; Prabhu, L; Jiang, J; Kaushik, V; Scheaffer, J; Zavala, M; Duda, E; Liu, R; Zonner, S; Hradsky, B; Fejes, P; Theodore, D; Edwards, G; Gregory, R; Wang, R; Yam, H; Yu, J; ...Mais
PUBLICAÇÃO: 2003, FONTE: 2003 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS
137
TÃTULO: Treatment of pregnant patients with antiphospholipid syndrome
AUTORES: Tincani, A; Branch, W; Levy, RA; Piette, JC; Carp, H; Rai, RS; Khamashta, M; Shoenfeld, Y;
PUBLICAÇÃO: 2003, FONTE: LUPUS, VOLUME: 12, NÚMERO: 7
AUTORES: Tincani, A; Branch, W; Levy, RA; Piette, JC; Carp, H; Rai, RS; Khamashta, M; Shoenfeld, Y;
PUBLICAÇÃO: 2003, FONTE: LUPUS, VOLUME: 12, NÚMERO: 7
138
TÃTULO: Physical and electrical properties of metal gate electrodes on HfO<sub>2</sub> gate dielectrics
AUTORES: Schaeffer, JK; Samavedam, SB; Gilmer, DC; Dhandapani, V; Tobin, PJ; Mogab, J; Nguyen, BY; White, BE; Dakshina Murthy, S; Rai, RS; Jiang, ZX; Martin, R; Raymond, MV; Zavala, M; La, LB; Smith, JA; Garcia, R; Roan, D; Kottke, M; Gregory, RB;
PUBLICAÇÃO: 2003, FONTE: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, VOLUME: 21, NÚMERO: 1
AUTORES: Schaeffer, JK; Samavedam, SB; Gilmer, DC; Dhandapani, V; Tobin, PJ; Mogab, J; Nguyen, BY; White, BE; Dakshina Murthy, S; Rai, RS; Jiang, ZX; Martin, R; Raymond, MV; Zavala, M; La, LB; Smith, JA; Garcia, R; Roan, D; Kottke, M; Gregory, RB;
PUBLICAÇÃO: 2003, FONTE: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, VOLUME: 21, NÚMERO: 1
139
TÃTULO: HfO<sub>2</sub> gate dielectrics deposited via tetrakis diethylamido hafnium
AUTORES: Schaeffer, J; Edwards, NV; Liu, R; Roan, D; Hradsky, B; Gregory, R; Kulik, J; Duda, E; Contreras, L; Christiansen, J; Zollner, S; Tobin, P; Nguyen, BY; Nieh, R; Ramon, M; Rao, R; Hegde, R; Rai, R; Baker, J; Voight, S;
PUBLICAÇÃO: 2003, FONTE: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, VOLUME: 150, NÚMERO: 4
AUTORES: Schaeffer, J; Edwards, NV; Liu, R; Roan, D; Hradsky, B; Gregory, R; Kulik, J; Duda, E; Contreras, L; Christiansen, J; Zollner, S; Tobin, P; Nguyen, BY; Nieh, R; Ramon, M; Rao, R; Hegde, R; Rai, R; Baker, J; Voight, S;
PUBLICAÇÃO: 2003, FONTE: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, VOLUME: 150, NÚMERO: 4
140
TÃTULO: Compatibility of silicon gates with hafnium-based gate dielectrics
AUTORES: Gilmer, DC; Hegde, R; Cotton, R; Smith, J; Dip, L; Garcia, R; Dhandapani, V; Triyoso, D; Roan, D; Franke, A; Rai, R; Prabhu, L; Hobbs, C; Grant, JM; La, L; Samavedam, S; Taylor, B; Tseng, H; Tobin, P;
PUBLICAÇÃO: 2003, FONTE: MICROELECTRONIC ENGINEERING, VOLUME: 69, NÚMERO: 2-4
AUTORES: Gilmer, DC; Hegde, R; Cotton, R; Smith, J; Dip, L; Garcia, R; Dhandapani, V; Triyoso, D; Roan, D; Franke, A; Rai, R; Prabhu, L; Hobbs, C; Grant, JM; La, L; Samavedam, S; Taylor, B; Tseng, H; Tobin, P;
PUBLICAÇÃO: 2003, FONTE: MICROELECTRONIC ENGINEERING, VOLUME: 69, NÚMERO: 2-4
