Katharina Lorenz
AuthID: R-000-90E
131
TÃTULO: Disorder induced violet/blue luminescence in rf-deposited ZnO films Full Text
AUTORES: Peres, M; Magalhaes, S; Soares, MR; Soares, MJ ; Rino, L; Alves, E ; Lorenz, K; Correia, MR ; Lourenco, AC; Monteiro, T ;
PUBLICAÇÃO: 2013, FONTE: E-MRS ICAM IUMRS Spring Meeting / Symposium T on Physics and Applications of Novel Gain Materials Based on Nitrogen and Bismuth Containing III-V Compounds in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 4, VOLUME: 10, NÚMERO: 4
AUTORES: Peres, M; Magalhaes, S; Soares, MR; Soares, MJ ; Rino, L; Alves, E ; Lorenz, K; Correia, MR ; Lourenco, AC; Monteiro, T ;
PUBLICAÇÃO: 2013, FONTE: E-MRS ICAM IUMRS Spring Meeting / Symposium T on Physics and Applications of Novel Gain Materials Based on Nitrogen and Bismuth Containing III-V Compounds in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 4, VOLUME: 10, NÚMERO: 4
NO MEU: 
ORCID | 
ResearcherID
ORCID | ResearcherID132
TÃTULO: Towards the understanding of the intentionally induced yellow luminescence in GaN nanowires Full Text
AUTORES: Rodrigues, J; Miranda, SMC; Fernandes, AJS; Nogales, E; Alves, LC; Alves, E ; Tourbot, G; Auzelle, T; Daudin, B; Mendez, B; Trindade, T ; Lorenz, K; Costa, FM ; Monteiro, T ;
PUBLICAÇÃO: 2013, FONTE: E-MRS ICAM IUMRS Spring Meeting / Symposium T on Physics and Applications of Novel Gain Materials Based on Nitrogen and Bismuth Containing III-V Compounds in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 4, VOLUME: 10, NÚMERO: 4
AUTORES: Rodrigues, J; Miranda, SMC; Fernandes, AJS; Nogales, E; Alves, LC; Alves, E ; Tourbot, G; Auzelle, T; Daudin, B; Mendez, B; Trindade, T ; Lorenz, K; Costa, FM ; Monteiro, T ;
PUBLICAÇÃO: 2013, FONTE: E-MRS ICAM IUMRS Spring Meeting / Symposium T on Physics and Applications of Novel Gain Materials Based on Nitrogen and Bismuth Containing III-V Compounds in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 4, VOLUME: 10, NÚMERO: 4
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID133
TÃTULO: On the origin of strain relaxation in epitaxial CdZnO layers
AUTORES: Redondo Cubero, A; Rodrigues, J; Brandt, M; Schaefer, P; Henneberger, F; Correia, MR ; Monteiro, T; Alves, E ; Lorenz, K;
PUBLICAÇÃO: 2013, FONTE: Conference on Oxide-Based Materials and Devices IV in OXIDE-BASED MATERIALS AND DEVICES IV, VOLUME: 8626
AUTORES: Redondo Cubero, A; Rodrigues, J; Brandt, M; Schaefer, P; Henneberger, F; Correia, MR ; Monteiro, T; Alves, E ; Lorenz, K;
PUBLICAÇÃO: 2013, FONTE: Conference on Oxide-Based Materials and Devices IV in OXIDE-BASED MATERIALS AND DEVICES IV, VOLUME: 8626
INDEXADO EM: 
Scopus WOS
Scopus WOS NO MEU: ORCID | ResearcherID
ORCID | ResearcherID134
TÃTULO: Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures Full Text
AUTORES: Redondo Cubero, A; Lorenz, K; Wendler, E; Carvalho, D; Ben, T; Morales, FM; Garcia, R; Fellmann, V; Daudin, B;
PUBLICAÇÃO: 2013, FONTE: NANOTECHNOLOGY, VOLUME: 24, NÚMERO: 50
AUTORES: Redondo Cubero, A; Lorenz, K; Wendler, E; Carvalho, D; Ben, T; Morales, FM; Garcia, R; Fellmann, V; Daudin, B;
PUBLICAÇÃO: 2013, FONTE: NANOTECHNOLOGY, VOLUME: 24, NÚMERO: 50
INDEXADO EM: Scopus WOS
Scopus WOS NO MEU: ORCID | ResearcherID
ORCID | ResearcherID135
TÃTULO: Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors
AUTORES: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLICAÇÃO: 2013, FONTE: JAPANESE JOURNAL OF APPLIED PHYSICS, VOLUME: 52, NÚMERO: 11
AUTORES: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLICAÇÃO: 2013, FONTE: JAPANESE JOURNAL OF APPLIED PHYSICS, VOLUME: 52, NÚMERO: 11
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID136
TÃTULO: Structural and luminescence properties of Eu and Er implanted Bi2O3 nanowires for optoelectronic applications Full Text
AUTORES: Maria Vila; Carlos Diaz Guerra; Katharina Lorenz; Javier Piqueras; Eduardo Alves ; Silvia Nappini; Elena Magnano;
PUBLICAÇÃO: 2013, FONTE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 1, NÚMERO: 47
AUTORES: Maria Vila; Carlos Diaz Guerra; Katharina Lorenz; Javier Piqueras; Eduardo Alves ; Silvia Nappini; Elena Magnano;
PUBLICAÇÃO: 2013, FONTE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 1, NÚMERO: 47
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID137
TÃTULO: Temperature-Dependent Hysteresis of the Emission Spectrum of Eu-implanted, Mg-doped HVPE GaN Full Text
AUTORES: O'Donnell, KP; Martin, RW; Edwards, PR; Lorenz, K; Alves, E; Bockowski, M;
PUBLICAÇÃO: 2013, FONTE: 31st International Conference on the Physics of Semiconductors (ICPS) in PHYSICS OF SEMICONDUCTORS, VOLUME: 1566
AUTORES: O'Donnell, KP; Martin, RW; Edwards, PR; Lorenz, K; Alves, E; Bockowski, M;
PUBLICAÇÃO: 2013, FONTE: 31st International Conference on the Physics of Semiconductors (ICPS) in PHYSICS OF SEMICONDUCTORS, VOLUME: 1566
138
TÃTULO: Study of the relationship between crystal structure and luminescence in rare-earth-implanted Ga2O3 nanowires during annealing treatments Full Text
AUTORES: López, I; Lorenz, K; Nogales, E; Méndez, B; Piqueras, J; Alves, E; García, JA;
PUBLICAÇÃO: 2013, FONTE: J Mater Sci - Journal of Materials Science, VOLUME: 49, NÚMERO: 3
AUTORES: López, I; Lorenz, K; Nogales, E; Méndez, B; Piqueras, J; Alves, E; García, JA;
PUBLICAÇÃO: 2013, FONTE: J Mater Sci - Journal of Materials Science, VOLUME: 49, NÚMERO: 3
139
TÃTULO: On the origin of strain relaxation in epitaxial CdZnO layers
AUTORES: Redondo-Cubero, A; Rodrigues, J; Brandt, M; Schäfer, P; Henneberger, F; Correia, MR; Monteiro, T; Alves, E; Lorenz, K;
PUBLICAÇÃO: 2013, FONTE: Oxide-based Materials and Devices IV
AUTORES: Redondo-Cubero, A; Rodrigues, J; Brandt, M; Schäfer, P; Henneberger, F; Correia, MR; Monteiro, T; Alves, E; Lorenz, K;
PUBLICAÇÃO: 2013, FONTE: Oxide-based Materials and Devices IV
140
TÃTULO: Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures Full Text
AUTORES: Redondo-Cubero, A; Lorenz, K; Wendler, E; Carvalho, D; Ben, T; Morales, FM; García, R; Fellmann, V; Daudin, B;
PUBLICAÇÃO: 2013, FONTE: Nanotechnology, VOLUME: 24, NÚMERO: 50
AUTORES: Redondo-Cubero, A; Lorenz, K; Wendler, E; Carvalho, D; Ben, T; Morales, FM; García, R; Fellmann, V; Daudin, B;
PUBLICAÇÃO: 2013, FONTE: Nanotechnology, VOLUME: 24, NÚMERO: 50
