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Xrd Analysis of Strained Ge-Sige Heterostructures on Relaxed Sige Graded Buffers Grown by Hybrid Epitaxy on Si(001) Substrates

AuthID
P-000-02Y

Author(s)

Franco, N

Barradas, NP

Alves, E

Vallera, AM

Morris, RJH

Mironov, OA

Parker, EHC

Document Type

Article

Year published

2005

Published

in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, ISSN: 0921-5107

Volume: 124, Issue: SUPPL., Pages: 123-126 (4)

Conference

Symposium on Materials Science and Device Issues for Future Si-Based Technologies Held at the 2005 Emrs Meeting, Date: MAY 31-JUN 03, 2005, Location: Strasbourg, FRANCE, Sponsors: European Mat Res Soc

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Publication Identifiers

DOI: 10.1016/j.mseb.2005.08.087

SCOPUS: 2-s2.0-27944476985

Wos: WOS:000233895800019

Source Identifiers

ISSN: 0921-5107

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Xrd Analysis of Strained Ge-Sige Heterostructures on Relaxed Sige Graded Buffers Grown by Hybrid Epitaxy on Si(001) Substrates

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Xrd Analysis of Strained Ge-Sige Heterostructures on Relaxed Sige Graded Buffers Grown by Hybrid Epitaxy on Si(001) Substrates

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