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Low-Temperature Molecular Beam Epitaxy of Ge on Si
AuthID
P-000-4XM
14
Author(s)
Leitao, JP
·
Fonseca, A
·
Sobolev, NA
·
Carmo, MC
·
Franco, N
·
Sequeira, AD
·
Burbaev, TM
·
Kurbatov, VA
·
Rzaev, MM
·
Pogosov, AO
·
Sibeldin, NN
·
Tsvetkov, VA
·
Lichtenberger, H
·
Schaffler, F
Document Type
Article
Year published
2005
Published
in
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,
ISSN: 1369-8001
Volume: 8, Issue: 1-3, Pages: 35-39 (5)
Conference
2Nd International Sige Technology and Device Meeting (Istdm),
Date:
MAY 16-19, 2004,
Location:
Frankfurt, GERMANY
Indexing
Wos
®
Scopus
®
Google Scholar
®
Metadata
Sources
Publication Identifiers
DOI
:
10.1016/j.mssp.2004.09.089
Scopus
: 2-s2.0-19944430351
Wos
: WOS:000227056200008
Source Identifiers
ISSN
: 1369-8001
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