Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and Two Oxygen Atoms in Silicon

AuthID
 P-000-5SP
11
Author(s)
Markevich, VP
·
Murin, LI
·
Lastovskii, SB
·
Medvedeva, IF
·
Lindstrom, JL
·
Peaker, AR
·
Jones, R
·
Oberg, S
·
Briddon, PR
5
Editor(s)
Pichaud,B;Claverie,A;Alquier,D;Richter,H;Kittler,M
Document Type
Article
Year published
2005
Published
in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI in SOLID STATE PHENOMENA, ISSN: 1012-0394
Volume: 108-109, Pages: 273-278 (6)
Conference
11Th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (Gadest 2005), Date: SEP 25-30, 2005, Location: Giens, FRANCE, Sponsors: TECSEN, CEMES CNRS, LMP
Indexing
Wos®
Scopus®
Crossref®10
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-34247888366
Wos: WOS:000234198300043
Source Identifiers
ISSN: 1012-0394
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