Comparison of Vacancy Creation by Nuclear and Electronic Processes in Silicon Irradiated with Swift Kr and Bi Ions

AuthID
P-000-DEB
9
Author(s)
Skuratov, VA
·
Sperr, P
·
Egger, W
·
Gill, CL
·
de Lima, AP
·
4
Editor(s)
Hyodo, T; Kobayashi, Y; Nagashima, Y; Saito, H
Document Type
Article
Year published
2004
Published
in POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS in Materials Science Forum, ISSN: 0255-5476
Volume: 445-6, Pages: 93-95 (3)
Conference
13Th International Conference on Positron Annihilation (Icpa-13), Date: SEP 07-12, 2003, Location: Kyoto, JAPAN, Sponsors: Commemorat Assoc Japan World Exposit (1970), Res Fdn Mat Sci, Sci Council Japan, Phys Soc Japan, Japan Soc Appl Phys, Chem Soc Japan, Japanese Soc Radiat Chem, Japan Radioisotope Assoc
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Publication Identifiers
Scopus: 2-s2.0-3142692852
Wos: WOS:000189406800025
Source Identifiers
ISSN: 0255-5476
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