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The Formation, Dissociation and Electrical Activity of Divacancy-Oxygen Complexes in Si
AuthID
P-000-E1S
4
Author(s)
Coutinho, J
·
Jones, R
·
Oberg, S
·
Briddon, PR
1
Editor(s)
Bonde Nielsen K.Nylandsted Larsen A.Weyer G.
Document Type
Article
Year published
2003
Published
in
PHYSICA B-CONDENSED MATTER,
ISSN: 0921-4526
Volume: 340, Pages: 523-527 (5)
Conference
22Nd International Conference on Defects in Semiconductors (Icds-22),
Date:
JUL 28-AUG 01, 2003,
Location:
AARHUS, DENMARK,
Host:
UNIV AARHUS
Indexing
Wos
®
Scopus
®
Crossref
®
12
Google Scholar
®
Metadata
Sources
Publication Identifiers
DOI
:
10.1016/j.physb.2003.09.143
SCOPUS
: 2-s2.0-0347134677
Wos
: WOS:000188300200106
Source Identifiers
ISSN
: 0921-4526
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