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Electronic Properties of Vacancy-Oxygen Complexes in Sige Alloys
AuthID
P-000-E1W
10
Author(s)
Markevich, VP
·
Peaker, AR
·
Murin, LI
·
Coutinho, J
·
Torres, VJB
·
Jones, R
·
Oberg, S
·
Briddon, PR
·
Auret, FD
·
Abrosimov, NV
1
Editor(s)
Bonde Nielsen K.Nylandsted Larsen A.Weyer G.
Document Type
Article
Year published
2003
Published
in
PHYSICA B-CONDENSED MATTER,
ISSN: 0921-4526
Volume: 340, Pages: 790-794 (5)
Conference
22Nd International Conference on Defects in Semiconductors (Icds-22),
Date:
JUL 28-AUG 01, 2003,
Location:
AARHUS, DENMARK,
Host:
UNIV AARHUS
Indexing
Wos
®
Scopus
®
Crossref
®
2
Google Scholar
®
Metadata
Sources
Publication Identifiers
DOI
:
10.1016/j.physb.2003.09.214
SCOPUS
: 2-s2.0-0347946868
Wos
: WOS:000188300200165
Source Identifiers
ISSN
: 0921-4526
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