Electronic and Structural Properties of Doped Amorphous and Nanocrystalline Silicon Deposited at Low Substrate Temperatures by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition

AuthID
 P-000-G4J
3
Author(s)
·
Document Type
Article
Year published
2003
Published
in JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, ISSN: 0734-2101
Volume: 21, Issue: 4, Pages: 1048-1054 (7)
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Publication Identifiers
SCOPUS: 2-s2.0-0042030920
Wos: WOS:000184409200032
Source Identifiers
ISSN: 0734-2101
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