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Correlation Between the Carbon and Hydrogen Contents with the Gas Species and the Plasma Impedance of Silicon Carbide Films Produced by Pecvd Technique

AuthID
P-000-SEK

Author(s)

Martins, R

Document Type

Article

Year published

2001

Published

in APPLIED SURFACE SCIENCE, ISSN: 0169-4332

Volume: 184, Issue: 1-4, Pages: 101-106 (6)

Conference

Spring Meeting of the European-Materials-Research-Society, Date: JUN 05-08, 2001, Location: STRASBOURG, FRANCE, Sponsors: European Mat Res Soc

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Publication Identifiers

DOI: 10.1016/s0169-4332(01)00483-4

Scopus: 2-s2.0-0035852198

Wos: WOS:000173000100017

Source Identifiers

ISSN: 0169-4332

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Correlation Between the Carbon and Hydrogen Contents with the Gas Species and the Plasma Impedance of Silicon Carbide Films Produced by Pecvd Technique

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Correlation Between the Carbon and Hydrogen Contents with the Gas Species and the Plasma Impedance of Silicon Carbide Films Produced by Pecvd Technique

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