Publications

40% Tunneling Magnetoresistance After Anneal at 380 Degrees C for Tunnel Junctions with Iron-Oxide Interface Layers

AuthID
P-000-VC3

Author(s)

Zhang, ZZ

Cardoso, S

Freitas, PP

Batlle, X

Wei, P

Barradas, N

Soares, JC

Editor(s)

Ching W.Y.Fidler J.Folks L.Katine J.A.

Document Type

Article

Year published

2001

Published

in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979

Volume: 89, Issue: 11, Pages: 6665-6667 (3)

Conference

8Th Joint Mmm/Intermag Conference, Date: JAN 08-11, 2001, Location: SAN ANTONIO, TEXAS, Sponsors: Motorola Labs, TDK Corp, IBM, Toda Kogyo Corp, EMTEC Magnet GmbH, Quantum, Seagate Res, Sony Corp, Magnequench Technol Ctr, AJA Int Inc, Digital Measurement Syst

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