Lattice Location of Implanted Cu in Highly Doped Si

AuthID
 P-000-YR4
6
Author(s)
Vantomme, A
·
Langouche, G
·
Document Type
Article
Year published
2000
Published
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 77, Issue: 14, Pages: 2142-2144 (3)
Indexing
Wos®
Scopus®
Crossref®23
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-0001455653
Wos: WOS:000089524900021
Source Identifiers
ISSN: 0003-6951
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