Annealing Behavior and Lattice Site Location of Hf Implanted Gan

AuthID
 P-001-4B5
5
Author(s)
da Silva, MF
·
Freitag, K
Document Type
Article
Year published
1999
Published
in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, ISSN: 0921-5107
Volume: 59, Issue: 1-3, Pages: 207-210 (4)
Conference
Proceedings of the 1998 Symposium L: on Nitrides and Related Wide Band Gap Materials (E-Mrs Meeting), Date: 16 June 1998 through 19 June 1998, Location: Strasbourg, Sponsors: Nichia Chemicals;Shinkosha Ltd.;Toyoda Gosei Ltd.;Emcore Corp.
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Publication Identifiers
Scopus: 2-s2.0-0033528894
Wos: WOS:000080689000044
Source Identifiers
ISSN: 0921-5107
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