The Influence of Argon Pressure and Rf Power on the Growth of Inp Thin Films

AuthID
 P-002-PQX
3
Author(s)
Document Type
Article
Year published
2011
Published
in SEMICONDUCTOR SCIENCE AND TECHNOLOGY, ISSN: 0268-1242
Volume: 26, Issue: 7, Pages: 075017 (8)
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Publication Identifiers
SCOPUS: 2-s2.0-79956204484
Wos: WOS:000289554400018
Source Identifiers
ISSN: 0268-1242
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