Thin-Film Transistors Based on Poly, (3,3 '''-Dialkyl-Quarterthiophene) and Zinc Oxide Nanowires with Improved Ambient Stability

AuthID
 P-002-T9S
6
Author(s)
Hsieh, GW
·
Dag, S
·
Milne, WI
Document Type
Article
Year published
2011
Published
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 98, Issue: 10, Pages: 102106 (3)
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Publication Identifiers
SCOPUS: 2-s2.0-79952691507
Wos: WOS:000288277200032
Source Identifiers
ISSN: 0003-6951
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