Toggle navigation
Publications
Researchers
Institutions
0
Sign In
Federated Authentication
(Click on the image)
Local Sign In
Password Recovery
Register
Sign In
Publications
Search
Statistics
Al1-Xinxn/Gan Bilayers: Structure, Morphology, and Optical Properties
AuthID
P-003-5FD
12
Author(s)
Lorenz, K
·
Magalhaes, S
·
Franco, N
·
Barradas, NP
·
Darakchieva, V
·
Alves, E
·
Pereira, S
·
Correia, MR
·
Munnik, F
·
Martin, RW
·
O'Donnell, KP
·
Watson, IM
Document Type
Article
Year published
2010
Published
in
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,
ISSN: 0370-1972
Volume: 247, Issue: 7, Pages: 1740-1746 (7)
Conference
E-Mrs Fall Meeting on Wide Band Gap Ii-Vi and Iii-V Semiconductors,
Date:
SEP 14-18, 2009,
Location:
Warsaw, POLAND,
Sponsors:
E-MRS
Indexing
Wos
®
Scopus
®
Crossref
®
7
Google Scholar
®
Metadata
Sources
Publication Identifiers
DOI
:
10.1002/pssb.200983656
SCOPUS
: 2-s2.0-77954567521
Wos
: WOS:000280263700035
Source Identifiers
ISSN
: 0370-1972
Export Publication Metadata
Export
×
Publication Export Settings
BibTex
EndNote
APA
Export Preview
Marked List
Add to Marked List
Info
At this moment we don't have any links to full text documens.
×
Select Source
This publication has:
2 records from
ISI
2 records from
SCOPUS
2 records from
DBLP
2 records from
Unpaywall
2 records from
Openlibrary
2 records from
Handle
Please select which records must be used by Authenticus!
×
Preview Publications
© 2024 CRACS & Inesc TEC - All Rights Reserved
Privacy Policy
|
Terms of Service