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Strong Compensation of N-Type Ge via Formation of Donor-Vacancy Complexes
AuthID
P-004-5RW
7
Author(s)
Coutinho, J
·
Janke, C
·
Carvalho, A
·
Torres, VJB
·
Oberg, S
·
Jones, R
·
Briddon, PR
Document Type
Article
Year published
2007
Published
in
PHYSICA B-CONDENSED MATTER,
ISSN: 0921-4526
Volume: 401, Pages: 179-183 (5)
Conference
24Th International Conference on Defects in Semiconductors,
Date:
JUL 22-27, 2007,
Location:
Albuquerque, NM
Indexing
Wos
®
Scopus
®
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®
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®
Metadata
Sources
Publication Identifiers
DOI
:
10.1016/j.physb.2007.08.141
SCOPUS
: 2-s2.0-36049036586
Wos
: WOS:000252041000042
Source Identifiers
ISSN
: 0921-4526
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