Strong Compensation of N-Type Ge via Formation of Donor-Vacancy Complexes

AuthID
 P-004-5RW
7
Author(s)
Janke, C
·
Carvalho, A
·
Oberg, S
·
Jones, R
·
Briddon, PR
Document Type
Article
Year published
2007
Published
in PHYSICA B-CONDENSED MATTER, ISSN: 0921-4526
Volume: 401, Pages: 179-183 (5)
Conference
24Th International Conference on Defects in Semiconductors, Date: JUL 22-27, 2007, Location: Albuquerque, NM
Indexing
Wos®
Scopus®
Crossref®
Google Scholar®
Publication Identifiers
Scopus: 2-s2.0-36049036586
Wos: WOS:000252041000042
Source Identifiers
ISSN: 0921-4526
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