Toggle navigation
Publications
Researchers
Institutions
0
Sign In
Federated Authentication
(Click on the image)
Local Sign In
Password Recovery
Register
Sign In
Publications
Search
Statistics
Three-State Memory Combining Resistive and Magnetic Switching Using Tunnel Junctions
AuthID
P-004-6TW
7
Author(s)
Ventura, J
·
Pereira, AM
·
Araujo, JP
·
Sousa, JB
·
Zhang, Z
·
Liu, Y
·
Freitas, PP
Document Type
Article
Year published
2007
Published
in
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
ISSN: 0022-3727
Volume: 40, Issue: 19, Pages: 5819-5823 (5)
Indexing
Wos
®
Scopus
®
Crossref
®
16
Google Scholar
®
Metadata
Sources
Publication Identifiers
DOI
:
10.1088/0022-3727/40/19/003
SCOPUS
: 2-s2.0-34748868091
Wos
: WOS:000250604000004
Source Identifiers
ISSN
: 0022-3727
Export Publication Metadata
Export
×
Publication Export Settings
BibTex
EndNote
APA
Export Preview
Marked List
Add to Marked List
Info
At this moment we don't have any links to full text documens.
×
Select Source
This publication has:
2 records from
ISI
2 records from
SCOPUS
2 records from
DBLP
2 records from
Unpaywall
2 records from
Openlibrary
2 records from
Handle
Please select which records must be used by Authenticus!
×
Preview Publications
© 2024 CRACS & Inesc TEC - All Rights Reserved
Privacy Policy
|
Terms of Service