Arsenic in Zno and Gan: Substitutional Cation or Anion Sites?

AuthID
P-004-EKS
1
Group Author(s)
ISOLDE Collaboration
4
Editor(s)
Ashok, S; Chevallier, J; Kiesel, P; Ogino, T
Document Type
Proceedings Paper
Year published
2007
Published
in SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES II in Materials Research Society Symposium Proceedings, ISSN: 0272-9172
Volume: 994, Pages: 3-14 (12)
Conference
Symposium on Semiconductor Defect Engineering Materials, Synthetic Structures and Devices Ii Held at the 2007 Mrs Spring Meeting, Date: APR 09-13, 2007, Location: San Francisco, CA, Sponsors: Mat Res Soc
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-45749107465
Wos: WOS:000250474700001
Source Identifiers
ISSN: 0272-9172
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