Trap Levels in the Atomic Layer Deposition-Zno/Gan Heterojunction-Thermal Admittance Spectroscopy Studies

AuthID
P-005-0P8
10
Author(s)
Krajewski, TA
·
Goscinski, K
·
Aschenbrenner, T
·
Document Type
Article
Year published
2013
Published
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 113, Issue: 19, Pages: 194504 (6)
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Publication Identifiers
SCOPUS: 2-s2.0-84878393262
Wos: WOS:000319295200056
Source Identifiers
ISSN: 0021-8979
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