Direct Evidence for Stability of Tetrahedral Interstitial Er in Si up to 900°C

AuthID
 P-007-7NG
5
Author(s)
Langouche, G
·
Vantomme, A
Document Type
Article
Year published
1997
Published
in Materials Science Forum, ISSN: 0255-5476
Volume: 258-263, Issue: 9993, Pages: 1503-1508
Indexing
Scopus®
Publication Identifiers
SCOPUS: 2-s2.0-0031339552
Source Identifiers
ISSN: 0255-5476
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