In Situ Characterization of the P-Si/Nh4F Interface During Dissolution in the Current Oscillations Regime

AuthID
P-007-825
7
Author(s)
Cattarin, S
·
Chazalviel, JN
·
Ozanam, F
·
Peter, LM
·
Stumper, J
Document Type
Article
Year published
1998
Published
in Journal of the Electrochemical Society, ISSN: 0013-4651
Volume: 145, Issue: 2, Pages: 498-502
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Publication Identifiers
SCOPUS: 2-s2.0-0031996606
Source Identifiers
ISSN: 0013-4651
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