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Ambipolar Diffusion Length in A-Si:h(F) and A-Si,Ge:h,F Measured with the Steady-State Photocarrier Grating Technique

AuthID
P-008-XMZ

Author(s)

Liu, JZ

Li, X

Roca i Cabarrocas, P

Conde, JP

Maruyama, A

Park, H

Wagner, S

Delahoy, AE

Document Type

Proceedings Paper

Year published

1990

Published

in Conference Record of the IEEE Photovoltaic Specialists Conference, ISSN: 0160-8371

Volume: 2, Pages: 1606-1609

Conference

Twenty First Ieee Photovoltaic Specialists Conference - 1990 Part 2 (Of 2), Date: 21 May 1990 through 25 May 1990, Location: Kissimimee, FL, USA, Sponsors: IEEE Electron Devices Soc

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Publication Identifiers

SCOPUS: 2-s2.0-0025420404

Source Identifiers

ISSN: 0160-8371

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Ambipolar Diffusion Length in A-Si:h(F) and A-Si,Ge:h,F Measured with the Steady-State Photocarrier Grating Technique

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Ambipolar Diffusion Length in A-Si:h(F) and A-Si,Ge:h,F Measured with the Steady-State Photocarrier Grating Technique

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