Strain Relaxation in Gan Films as a Function of Growth Direction and Buffer Layer Measured by Raman Spectroscopy

AuthID
 P-00F-GTF
4
Author(s)
Seitz, R
·
Di Forte Poisson, M
Document Type
Article
Year published
1999
Published
in Physica Status Solidi (A) Applied Research, ISSN: 0031-8965
Volume: 176, Issue: 1, Pages: 661-664
Conference
Proceedings of the 1999 3Rd International Conference on Nitride Semiconductors (Icns'99), Date: 4 July 1999 through 9 July 1999, Location: Montpellier, France
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Publication Identifiers
SCOPUS: 2-s2.0-0033221907
Source Identifiers
ISSN: 0031-8965
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