Comprehensive Numerical Simulation of Defect Density and Temperature-Dependent Transport Properties in Hydrogenated Amorphous Silicon

AuthID
 P-00F-M1N
2
Author(s)
Wang, F
·
Document Type
Article
Year published
1995
Published
in Physical Review B, ISSN: 0163-1829
Volume: 52, Issue: 20, Pages: 14586-14597
Indexing
Scopus®
Crossref®
Google Scholar®
Publication Identifiers
Scopus: 2-s2.0-0001124136
Source Identifiers
ISSN: 0163-1829
Export Publication Metadata
Marked List
 Add to Marked List
Info
At this moment we don't have any links to full text documens.

footer slogan

Useful Links

Get Help

© 2024 CRACS & Inesc TEC - All Rights Reserved Privacy Policy | Terms of Service