Bulk and Surface Properties of Amorphous Hydrogenated Fluorinated Silicon Grown from Sif4 and H2

AuthID
P-00F-MRJ
7
Author(s)
Maruyama, A
·
Shen Dashen, S
·
Liu, JZ
·
Campbell, I
·
Fauchet Phillipe, M
·
Wagner, S
Document Type
Article
Year published
1989
Published
in IEEE Transactions on Electron Devices, ISSN: 0018-9383
Volume: 36, Issue: 12, Pages: 2853-2858
Conference
International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology, Date: 1 November 1988 through 1 November 1988, Location: Yorktown Heights, NY, USA
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-0024923603
Source Identifiers
ISSN: 0018-9383
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