Publications

Lattice Location Of Ion-Implanted Radioactive Dopants In Compound Semiconductors

AuthID
P-00F-MSP

Author(s)

WINTER, S

BLASSER, S

HOFSASS, H

JAHN, S

LINDNER, G

WAHL, U

RECKNAGEL, E

Document Type

Article

Year published

1990

Published

in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN: 0168-583X

Volume: 48, Issue: 1-4, Pages: 211-215 (5)

Conference

13Th International Conf On Atomic Collisions In Solids, Date: AUG 07-11, 1989, Location: AARHUS, DENMARK, Sponsors: AARHUS UNIV RES FDN, DANISH NAT SCI RES COUNCIL, NORD INST THEORET ATOM PHYS, DANISH COMM ACCELERAT PHYS, NORD COMM ACCELERAT PHYS, THOMAS B THRIGE FDN, CARLSBERG MEM FDN BREWER J C JACOBSEN, SCANDINAVIAN AIRLINES SYST, NORSK DATA, NORDISKA BALZERS

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