Enhanced P-Type Conductivity and Band Gap Narrowing in Heavily Al Doped Nio Thin Films Deposited by Rf Magnetron Sputtering

AuthID
 P-00F-VSG
4
Author(s)
Maiti, UN
·
Ghosh, CK
·
Document Type
Article
Year published
2009
Published
in JOURNAL OF PHYSICS-CONDENSED MATTER, ISSN: 0953-8984
Volume: 21, Issue: 11, Pages: 115804 (7)
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Publication Identifiers
SCOPUS: 2-s2.0-65549171624
Wos: WOS:000263677300027
Source Identifiers
ISSN: 0953-8984
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