Role of Oxygen Partial Pressure on the Properties of Doped Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques

AuthID
 P-00H-WX5
1
Author(s)
Document Type
Article
Year published
1995
Published
in Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, ISSN: 07342101
Volume: 13, Issue: 4, Pages: 2199-2209 (10)
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Publication Identifiers
SCOPUS: 2-s2.0-21844500459
Source Identifiers
ISSN: 07342101
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