High In-Content Ingan Layers Synthesized by Plasma-Assisted Molecular-Beam Epitaxy: Growth Conditions, Strain Relaxation, and In Incorporation Kinetics

AuthID
P-00J-M7H
10
Author(s)
Wang, Y
·
Chauvat, M
·
Ruterana, P
·
Pouget, S
·
Monroy, E
Document Type
Article
Year published
2014
Published
in J. Appl. Phys. - Journal of Applied Physics, ISSN: 0021-8979
Volume: 116, Issue: 23, Pages: 233504
Indexing
Publication Identifiers
Source Identifiers
ISSN: 0021-8979
Export Publication Metadata
Marked List
Info
At this moment we don't have any links to full text documens.