Effect of Aln Content on the Lattice Site Location of Terbium Ions in Alxga1-Xn Compounds

AuthID
 P-00K-8EP
7
Author(s)
Fialho, M
·
Document Type
Article
Year published
2016
Published
in SEMICONDUCTOR SCIENCE AND TECHNOLOGY, ISSN: 0268-1242
Volume: 31, Issue: 3, Pages: 035026 (8)
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Publication Identifiers
SCOPUS: 2-s2.0-84959449564
Wos: WOS:000372423200030
Source Identifiers
ISSN: 0268-1242
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