Mossbauer Parameters of Fe-Related Defects in Group-Iv Semiconductors: First Principles Calculations

AuthID
 P-00K-FVH
4
Author(s)
Wright, E
·
Oberg, S
·
Document Type
Article
Year published
2016
Published
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 119, Issue: 18, Pages: 181509 (16)
Conference
28Th International Conference on Defects in Semiconductors (Icds), Date: JUL 27-31, 2015, Location: Espoo, FINLAND, Sponsors: Aalto Univ Sch Sci, Helsinki Reg Transport, Agilent Technologies, Nokia
Indexing
Wos®
Scopus®
Crossref®4
Google Scholar®
Publication Identifiers
Scopus: 2-s2.0-84969520087
Wos: WOS:000377717500011
Source Identifiers
ISSN: 0021-8979
Export Publication Metadata
Marked List
 Add to Marked List
Info
At this moment we don't have any links to full text documens.

footer slogan

Useful Links

Get Help

© 2024 CRACS & Inesc TEC - All Rights Reserved Privacy Policy | Terms of Service