32Nm General Purpose Bulk Cmos Technology for High Performance Applications at Low Voltage

AuthID
P-00N-QTE
36
Author(s)
Arnaud, F
·
Liu, J
·
Lee, YM
·
Lim, KY
·
Kohler, S
·
Chen, J
·
Moon, BK
·
Lai, CW
·
Lipinski, M
·
[+3]·
[+13]·
Kim, HW
·
Ee, YC
·
Sudijono, J
·
Thean, A
·
Sherony, M
·
Samavedam, S
·
Khare, M
·
Goldberg, C
·
Steegen, A
Document Type
Proceedings Paper
Year published
2008
Published
in Technical Digest - International Electron Devices Meeting, IEDM, ISSN: 0163-1918
Conference
2008 Ieee International Electron Devices Meeting, Iedm 2008, Date: 15 December 2008 through 17 December 2008, Location: San Francisco, CA
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-64649085166
Source Identifiers
ISSN: 0163-1918
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Name Order Name   Name Order Name   Name Order Name
1 Arnaud, F;   2 Liu, J;   3 Lee, YM;
4 Lim, KY;   5 Kohler, S;   6 Chen, J;
7 Moon, BK;   8 Lai, CW;   9 Lipinski, M;
10 Sang, L;   11 Guarin, F;   12 Hobbs, C;
13 Ferreira, P ;   14 Ohuchi, K;   15 Li, J;
16 Zhuang, H;   17 Mora, P;   18 Zhang, Q;
19 Nair, DR;   20 Lee, DH;   21 Chan, KK;
22 Satadru, S;   23 Yang, S;   24 Koshy, J;
25 Hayter, W;   26 Zaleski, M;   27 Coolbaugh, DV;
28 Kim, HW;   29 Ee, YC;   30 Sudijono, J;
31 Thean, A;   32 Sherony, M;   33 Samavedam, S;
34 Khare, M;   35 Goldberg, C;   36 Steegen, A;