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Robust Multi-V-T 4T Sram Cell in 45Nm Thin Box Fully-Depleted Soi Technology with Ground Plane

AuthID
P-00P-46Q

Author(s)

Noel, JP

Thomas, O

Fenouillet Beranger, C

Jaud, MA

Amara, A

Document Type

Proceedings Paper

Year published

2009

Published

in 2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS

Pages: 191-+ (2)

Conference

International Conference on Integrated Circuit Design and Technology, Date: MAY 18-20, 2009, Location: Austin, TX, Sponsors: IEEE Cent Texas Sect, Japan Soc Appl Phys

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Publication Identifiers

DOI: 10.1109/icicdt.2009.5166293

Wos: WOS:000270582500044

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