Publications

Radiation-Induced Defect Reactions in Tin-Doped Ge Crystals

AuthID
P-00P-5R1

Author(s)

Markovich, VP

Peaker, AR

Hamilton, B

Litvinov, VV

Pokotilo, YM

Petukh, AN

Lastovskii, SB

Coutinho, J

Rayson, MJ

Briddon, PR

Editor(s)

Jantsch, W; Schaffler, F

Document Type

Proceedings Paper

Year published

2011

Published

in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV in Solid State Phenomena, ISSN: 1012-0394

Volume: 178-179, Pages: 392-+ (2)

Conference

14Th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor (Gadest2011), Date: SEP 25-30, 2011, Location: Loipersdorf Spa & Conf Ctr, Loipersdorf, AUSTRIA, Sponsors: Johannes Kepler Univ, Inst Halbleiter & Festkorperphysik, Gesellschaft Halbleiterphysik & Technol, Zentrum Interkulturelle Studien Furstenfeld, Blue Chip Energy BmbH, Host: Loipersdorf Spa & Conf Ctr

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