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Parallel Association of Power Semiconductors: An Experimental Evaluation with Igbts and Mosfets

AuthID
P-00Q-T9E

Author(s)

Sousa, TJC

Monteiro, V

Nova, B

Passos, F

Cunha, J

Afonso, JL

Document Type

Proceedings Paper

Year published

2019

Published

in Proceedings - 2019 International Young Engineers Forum, YEF-ECE 2019

Pages: 8-13

Conference

3Rd International Young Engineers Forum, Yef-Ece 2019, Date: 10 May 2019, Sponsors: Faculty of Science and Technology;The Institute of Electrical and Electronics Engineers (IEEE);UNINOVA;Universidade NOVA de Lisboa

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Publication Identifiers

DOI: 10.1109/yef-ece.2019.8740817

Scopus: 2-s2.0-85068461189

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Parallel Association of Power Semiconductors: An Experimental Evaluation with Igbts and Mosfets

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Parallel Association of Power Semiconductors: An Experimental Evaluation with Igbts and Mosfets

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