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Álvaro Manuel Rodrigues Balsas
AuthID:
R-000-JMD
Publications
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Article (4)
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Confirmed Publications: 4
1
TITLE:
Vibrational properties of elemental hydrogen centres in Si, Ge and dilute SiGe alloys
Full Text
AUTHORS:
Balsas, A
;
Torres, VJB
;
Coutinho, J
;
Jones, R
; Hourahine, B;
Briddon, PR
;
Barroso, M
;
PUBLISHED:
2005
,
SOURCE:
1st International Workshop on Coordination Action on Defects Relevent to Engineering Silicon-Based Devices
in
JOURNAL OF PHYSICS-CONDENSED MATTER,
VOLUME:
17,
ISSUE:
22
INDEXED IN:
WOS
2
TITLE:
Vibrational properties of elemental hydrogen centres in Si, Ge and dilute SiGe alloys
Full Text
AUTHORS:
Balsas, A
;
Torres, VJB
;
Coutinho, J
; Jones, R; Hourahine, B; Briddon, PR;
Barroso, M
;
PUBLISHED:
2005
,
SOURCE:
Journal of Physics Condensed Matter,
VOLUME:
17,
ISSUE:
22
INDEXED IN:
Scopus
CrossRef
IN MY:
ORCID
3
TITLE:
Calculation of deep states in SiGe alloys: Interstitial carbon-oxygen complexes
AUTHORS:
Balsas, A
;
Coutinho, J
;
Torres, VJB
;
Briddon, PR
;
Barroso, M
;
PUBLISHED:
2004
,
SOURCE:
PHYSICAL REVIEW B,
VOLUME:
70,
ISSUE:
8
INDEXED IN:
Scopus
WOS
CrossRef
:
19
IN MY:
ORCID
4
TITLE:
Electronic levels of interstitial carbon and carbon-oxygen centers in SiGe alloys
Full Text
AUTHORS:
Coutinho, J
;
Balsas, A
;
Torres, VJB
;
Briddom, PR
;
Barroso, M
;
PUBLISHED:
2004
,
SOURCE:
Symposium on Material Science Issues in Advanced CMOS Source-Drain Engineeing held at the E-MRS 2004 Spring Meeting
in
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,
VOLUME:
114,
ISSUE:
SPEC. ISS.
INDEXED IN:
Scopus
WOS
CrossRef
IN MY:
ORCID
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