21
TITLE: InOx semiconductor films deposited on glass substrates for transparent electronics  Full Text
AUTHORS: Nunes N de Carvalho ; Lavareda, G ; Amaral, A ; Conde, O ; Ramos, AR ;
PUBLISHED: 2006, SOURCE: 1st Conference on Advances in Optical Materials (AIOM) in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, ISSUE: 23-25
INDEXED IN: Scopus WOS CrossRef
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22
TITLE: Transparent thin film transistors based on indium oxide semiconductor  Full Text
AUTHORS: Lavareda, G ; Nunes N de Carvalho ; Fortunato, E ; Ramos, AR ; Alves, E ; Conde, O ; Amaral, A ;
PUBLISHED: 2006, SOURCE: 1st Conference on Advances in Optical Materials (AIOM) in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, ISSUE: 23-25
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
23
TITLE: ITO films with enhanced electrical properties deposited on unheated ZnO-coated polymer substrates  Full Text
AUTHORS: de Carvalho, CN ; Lavareda, G ; Fortunato, E ; Alves, H; Goncalves, A; Varela, J; Nascimento, R; Amaral, A ;
PUBLISHED: 2005, SOURCE: Symposium on Functional Oxides for Advanced Semiconductor Technologies in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 118, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef
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24
TITLE: ITO properties on anisotropic flexible transparent cellulosic substrates under different stress conditions  Full Text
AUTHORS: Amaral, A ; de Carvalho, CN ; Brogueira, P ; Lavareda, G ; Melo, LV ; Godinho, MH ;
PUBLISHED: 2005, SOURCE: Symposium on Functional Oxides for Advanced Semiconductor Technologies in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 118, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef
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25
TITLE: a-Si : H TFT enhancement by plasma processing of the insulating/semiconductor interface  Full Text
AUTHORS: Lavareda, G ; de Carvalho, CN ; Amaral, A ; Fortunato, E ; Vilarinho, P ;
PUBLISHED: 2004, SOURCE: Symposium on Functional Metal Oxides - Semiconductor Structures held at the E-MRS 2003 Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 109, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef: 2
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26
TITLE: Improvement of field-effect mobilities in TFTs: Surface plasma treatments vs stack dielectric structures
AUTHORS: Lavareda, G ; de Carvalho, CN ; Amaral, A ; Fortunato, E ;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
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27
TITLE: ITO films deposited by rf-PERTE on unheated polymer substrates-properties dependence on In-Sn alloy composition  Full Text
AUTHORS: de Carvalho, CN ; Lavareda, G ; Fortunato, E ; Vilarinho, R; Amaral, A ;
PUBLISHED: 2004, SOURCE: Symposium on Functional Metal Oxides - Semiconductor Structures held at the E-MRS 2003 Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 109, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef
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28
TITLE: Optimisation of a home-made RIE system - Effect of SF6 plasma on the properties of partially etched a-Si : H films
AUTHORS: Pereira, P; Lavareda, G ; do Rego, AMB ; Amaral, A ; de Carvalho, CN ;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS
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29
TITLE: Positron annihilation studies in amorphous silicon nitride
AUTHORS: Gordo, PM ; Naia, MD ; Gill, CL; de Lima, AP; Lavareda, G ; de Carvalho, CN ; Amaral, A ; Kajcsos, Z;
PUBLISHED: 2004, SOURCE: 13th International Conference on Positron Annihilation (ICPA-13) in POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS, VOLUME: 445-6
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30
TITLE: Properties of a-Si : H TFTs using silicon carbonitride as dielectric  Full Text
AUTHORS: Lavareda, G ; de Carvalho, CN ; Fortunato, E ; Amaral, A ; Ramos, AR ;
PUBLISHED: 2004, SOURCE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338, ISSUE: 1 SPEC. ISS.
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