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TITLE: Lattice location of implanted Cu in highly doped Si Full Text
AUTHORS: Wahl, U ; Vantomme, A; Langouche, G; Araujo, JP ; Peralta, L; Correia, JG ;
PUBLISHED: 2000, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 77, ISSUE: 14

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TITLE: Er-O clustering and its influence on the lattice sites of Er in Si Full Text
AUTHORS: Wahl, U ; Correia, JG ; Araujo, JP ; Vantomme, A; Langouche, G;
PUBLISHED: 1999, SOURCE: 20th International Conference on Defects in Semiconductors (ICDS-20) in PHYSICA B-CONDENSED MATTER, VOLUME: 273-4

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TITLE: Stability and diffusion of Hg implanted YBa2Cu3O6+x Full Text
AUTHORS: J.P Araújo ; J.G Correia ; Wahl, U ; J.G Marques ; Alves, E ; V.S Amaral ; A.A Lourenço; Galindo, V; T.von Papen; J.P Senateur; Weiss, F; Vantomme, A; Langouche, G; A.A Melo; M.F.da Silva; J.C Soares ; J.B Sousa ; the ISOLDE Collaboration;
PUBLISHED: 1999, SOURCE: 11th International Conference on Ion Beam Modification of Materials (IBMM98) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 148, ISSUE: 1-4

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TITLE: Stability studies of Hg implanted YBa2Cu3O6+x Full Text
AUTHORS: J.P Araújo ; J.G Correia ; Wahl, U ; J.G Marques ; Alves, E ; V.S Amaral ; A.A Lourenço; Galindo, V; von Papen, T; J.P Senateur; Weiss, F; Vantomme, A; Langouche, G; A.A Melo; M.F da Silva; J.C Soares ; J.B Sousa ; ISOLDE Collaboration;
PUBLISHED: 1999, SOURCE: Symposium J on Ion Implantation into Semiconductors, Oxides and Ceramics, at the Spring Meeting of the European-Materials-Research-Society in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 147, ISSUE: 1-4

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TITLE: Electron emission channeling with position-sensitive detectors Full Text
AUTHORS: Wahl, U ; Correia, JG ; Cardoso, S; Marques, JG ; Vantomme, A; Langouche, G;
PUBLISHED: 1998, SOURCE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136

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TITLE: Direct evidence for stability of tetrahedral interstitial Er in Si up to 900°C
AUTHORS: Wahl, U ; Correia, JG ; Langouche, G; Marques, JG ; Vantomme, A;
PUBLISHED: 1997, SOURCE: Materials Science Forum, VOLUME: 258-263, ISSUE: 9993

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TITLE: Direct evidence for tetrahedral interstitial Er in Si
AUTHORS: Wahl, U ; Vantomme, A; DeWachter, J; Moons, R; Langouche, G; Marques, JG ; Correia, JG ;
PUBLISHED: 1997, SOURCE: PHYSICAL REVIEW LETTERS, VOLUME: 79, ISSUE: 11

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