Eduardo Jorge da Costa Alves


AuthID: R-000-4EK

Confirmed Publications: 597



341
TITLE: Simulation of deep resonances in elastic backscattering data  Full Text
AUTHORS: Barradas, NP ; Alves, E ;
PUBLISHED: 2006, SOURCE: 17th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 249, ISSUE: 1-2 SPEC. ISS.
INDEXED IN: Scopus WOS CrossRef
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342
TITLE: Stability and luminescence studies of Tm and Er implanted ZnO single crystals  Full Text
AUTHORS: Rita, E; Alves, E ; Wahl, U ; Correia, JG ; Monteiro, T ; Soares, MJ ; Neves, A ; Peres, M;
PUBLISHED: 2006, SOURCE: 14th International Conference on Ion Beam Modification of Materials (IBMM 2004) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 242, ISSUE: 1-2
INDEXED IN: Scopus WOS CrossRef: 18
IN MY: ORCID | ResearcherID
343
TITLE: Structural and optical characterization of light emitting InGaN/GaN epitaxial layers
AUTHORS: Pereira, S ; Correia, MR ; Alves, E ;
PUBLISHED: 2006, SOURCE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, ISSUE: PART 1
INDEXED IN: Scopus WOS
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344
TITLE: Structural evolution in ZrNxOy thin films as a function of temperature  Full Text
AUTHORS: Cunha, L ; Vaz, F ; Moura, C ; Rebouta, L ; Carvalho, P; Alves, E ; Cavaleiro, A ; Goudeau, P; Riviere, JP;
PUBLISHED: 2006, SOURCE: SURFACE & COATINGS TECHNOLOGY, VOLUME: 200, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef: 39
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345
TITLE: Structure and optical properties of sapphire implanted with boron at room temperature and 1000 degrees C  Full Text
AUTHORS: Carl J McHargue; Alves, E ; Ononye, LC; Marques, C;
PUBLISHED: 2006, SOURCE: 13th International Conference on Radiation Effects in Insulators (REI-2005) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 250, ISSUE: 1-2 SPEC. ISS.
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
346
TITLE: Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN  Full Text
AUTHORS: Wojtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: 6th International Conference on Nitride Semiconductors (ICNS-6) in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 243, ISSUE: 7
INDEXED IN: Scopus WOS
IN MY: ResearcherID
347
TITLE: Study of the oxygen role in the photoluminescence of erbium doped nanocrystalline silicon embedded in a silicon amorphous matrix  Full Text
AUTHORS: Cerqueira, MF ; Losurdo, M; Monteiro, T ; Stepikhova, M; Soares, MJ ; Peres, M; Alves, E ; Conde, O ;
PUBLISHED: 2006, SOURCE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, ISSUE: 9-20
INDEXED IN: Scopus WOS CrossRef: 2
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348
349
TITLE: TEM investigation of Tm implanted GaN, the influence of high temperature annealing  Full Text
AUTHORS: Wojtowicz, T; Gloux, F; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, ISSUE: 6-7
INDEXED IN: Scopus WOS
IN MY: ResearcherID
350
TITLE: The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layer  Full Text
AUTHORS: Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, ISSUE: 4-6
INDEXED IN: Scopus WOS CrossRef
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Page 35 of 60. Total results: 597.

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