Eduardo Jorge da Costa Alves


AuthID: R-000-4EK

Confirmed Publications: 597



61
TITLE: Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix
AUTHORS: Pinto, SRC; Buljan, M; Marques, L ; Martin Sanchez, J; Conde, O ; Chahboun, A ; Ramos, AR ; Barradas, NP ; Alves, E ; Bernstorff, S; Grenzer, J; Mucklich, A; Ramos, MMD ; Gomes, MJM ;
PUBLISHED: 2012, SOURCE: NANOTECHNOLOGY, VOLUME: 23, ISSUE: 40
INDEXED IN: Scopus WOS CrossRef Handle
IN MY: ORCID
62
TITLE: Investigation of generation of defects due to metallization on CdZnTe detectors  Full Text
AUTHORS: Zheng, Q; Dierre, F; Franc, J; Crocco, J; Bensalah, H; Corregidor, V ; Alves, E ; Ruiz, E; Vela, O; Perez, JM; Dieguez, E;
PUBLISHED: 2012, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 45, ISSUE: 17
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
63
TITLE: Ion beams as a tool for the characterization of near-pseudomorphic CdZnO epilayers
AUTHORS: Redondo Cubero, A; Brandt, M; Henneberger, F; Alves, E ; Lorenz, K ;
PUBLISHED: 2012, SOURCE: Conference on Oxide-Based Materials and Devices III in OXIDE-BASED MATERIALS AND DEVICES III, VOLUME: 8263
INDEXED IN: Scopus WOS
IN MY: ResearcherID
64
TITLE: Ion implantation of Cd and Ag into AlN and GaN  Full Text
AUTHORS: Miranda, SMC; Kessler, P; Correia, JG ; Vianden, R; Johnston, K; Alves, E ; Lorenz, K;
PUBLISHED: 2012, SOURCE: Symposium F on Group III Nitrides and their Heterostructures for Electronics and Photonics/ICAM IUMRS Spring Meeting of the European-Materials-Research-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, VOLUME: 9, ISSUE: 3-4
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
65
TITLE: Optical doping of AlxGa1-xN compounds by Ion Implantation of Tm ions  Full Text
AUTHORS: Fialho, M; Lorenz, K; Magalhaes, S; Redondo Cubero, A; Rodrigues, J; Santos, NF; Monteiro, T ; Alves, E ;
PUBLISHED: 2012, SOURCE: 19th International Conference on Ion Implantation Technology (IIT) in ION IMPLANTATION TECHNOLOGY 2012, VOLUME: 1496
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID | ResearcherID
66
TITLE: Optical properties of LFZ grown beta-Ga2O3:Eu3+ fibres  Full Text
AUTHORS: Santos, NF; Rodrigues, J; Fernandes, AJS; Alves, LC ; Alves, E ; Costa, FM ; Monteiro, T ;
PUBLISHED: 2012, SOURCE: APPLIED SURFACE SCIENCE, VOLUME: 258, ISSUE: 23
INDEXED IN: Scopus WOS CrossRef: 10
IN MY: ORCID | ResearcherID
67
TITLE: Rare earth co-doping nitride layers for visible light  Full Text
AUTHORS: Rodrigues, J; Miranda, SMC; Santos, NF; Neves, AJ ; Alves, E ; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2012, SOURCE: MATERIALS CHEMISTRY AND PHYSICS, VOLUME: 134, ISSUE: 2-3
INDEXED IN: Scopus WOS CrossRef: 10
IN MY: ORCID | ResearcherID
68
TITLE: Room temperature magnetic response of sputter deposited TbDyFe films as a function of the deposition parameters
AUTHORS: Rebouta, L ; Martins, P; Lanceros Mendez, S ; Barandiaran, JM; Gutierrez, J; Alves, LC ; Alves, E ;
PUBLISHED: 2012, SOURCE: JOURNAL OF NANO RESEARCH, VOLUME: 18-19
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
69
TITLE: Single phase alpha-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents
AUTHORS: Redondo Cubero, A ; Hierro, A; M Chauveau; Lorenz, K ; Tabares, G; Franco, N; Alves, E ; Munoz, E;
PUBLISHED: 2012, SOURCE: CRYSTENGCOMM, VOLUME: 14, ISSUE: 5
INDEXED IN: Scopus WOS
IN MY: ResearcherID
70
TITLE: Stopping power of C in Si  Full Text
AUTHORS: Nuno P Barradas ; Alves, E ; Siketic, Z; Bogdanovic B Radovic;
PUBLISHED: 2012, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 273
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
Page 7 of 60. Total results: 597.

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