José Pedro de Abreu Coutinho


AuthID: R-000-8V3

Confirmed Publications: 105



51
TITLE: Calculation of deep carrier traps in a divacancy in germanium crystals  Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Jones, R; Carvalho, A; Oberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 88, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef: 18
IN MY: ORCID
52
TITLE: Donor-vacancy complexes in Ge: Cluster and supercell calculations
AUTHORS: Coutinho, J ; Oberg, S; Torres, VJB ; Barroso, M ; Jones, R; Briddon, PR;
PUBLISHED: 2006, SOURCE: PHYSICAL REVIEW B, VOLUME: 73, ISSUE: 23
INDEXED IN: Scopus WOS CrossRef: 51
IN MY: ORCID
53
TITLE: Early SiO2 precipitates in Si: Vacancy-oxygen versus interstitial-oxygen clusters  Full Text
AUTHORS: Torres, VJB ; Coutinho, J ; Jones, R; Barroso, M ; Oberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: 23rd International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 376, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 11
IN MY: ORCID
54
TITLE: Energy levels of atomic hydrogen in germanium from ab-initio calculations  Full Text
AUTHORS: Almeida, LM; Coutinho, J ; Torres, VJB ; Jones, R; Briddon, PR;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID
55
TITLE: First-principles investigation of a bistable boron-oxygen interstitial pair in Si
AUTHORS: Carvalho, A; Jones, R; Sanati, M; Estreicher, SK; Coutinho, J ; Briddon, PR;
PUBLISHED: 2006, SOURCE: PHYSICAL REVIEW B, VOLUME: 73, ISSUE: 24
INDEXED IN: Scopus WOS CrossRef: 18
IN MY: ORCID
56
TITLE: Formation energy and migration barrier of a Ge vacancy from ab initio studies  Full Text
AUTHORS: Pinto, HM; Coutinho, J ; Torres, VJB ; Oeberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
INDEXED IN: Scopus WOS CrossRef: 34
IN MY: ORCID
57
TITLE: Hydrogen self-trapping near silicon atoms in Ge-rich SiGe alloys  Full Text
AUTHORS: Pereira, RN ; Nielsen, BB; Coutinho, J ; Torres, VJB ; Briddon, PR;
PUBLISHED: 2006, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 88, ISSUE: 14
INDEXED IN: Scopus WOS CrossRef: 5
IN MY: ORCID
58
TITLE: Local modes of hydrogen defects in Si : Ge and Ge : Si  Full Text
AUTHORS: Pereira, RN ; Nielsen, BB; Coutinho, J ;
PUBLISHED: 2006, SOURCE: 23rd International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 376, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 1
IN MY: ORCID
59
TITLE: Local vibrations of interstitial carbon in SiGe alloys  Full Text
AUTHORS: Khirunenkko, LI; Yu. V Pomozov; Sosnin, MG; Trypachko, MO; Duvanskii, A; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
INDEXED IN: Scopus WOS
60
TITLE: Local vibrations of substitutional carbon in SiGe alloys
AUTHORS: Khirunenko, L; Pomozov, Y; Sosnin, M; Torres, VJB ; Coutinho, J ; Jones, R; Abrosimov, NV; Riemann, H; Briddon, PR;
PUBLISHED: 2006, SOURCE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, ISSUE: PART 1
INDEXED IN: Scopus WOS
IN MY: ORCID
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