Katharina Lorenz


AuthID: R-000-90E

Confirmed Publications: 129



21
TITLE: A Double Scattering Analytical Model For Elastic Recoil Detection Analysis  Full Text
AUTHORS: Barradas, NP ; Lorenz, K ; Darakchieva, V; Alves, E ; Floyd D McDaniel; Barney L Doyle;
PUBLISHED: 2011, SOURCE: 21st International Conference on Application of Accelerators in Research and Industry (CAARI) in APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: TWENTY-FIRST INTERNATIONAL CONFERENCE, VOLUME: 1336
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22
TITLE: A mechanism for damage formation in GaN during rare earth ion implantation at medium range energy and room temperature  Full Text
AUTHORS: Ruterana, P; Lacroix, B; Lorenz, K ;
PUBLISHED: 2011, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 109, ISSUE: 1
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23
TITLE: Band gap engineering approaches to increase InGaN/GaN LED efficiency
AUTHORS: Auf Der Maur, M; Di Carlo, A; Lorenz, K ;
PUBLISHED: 2011, SOURCE: 11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011 in Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
INDEXED IN: Scopus CrossRef
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24
TITLE: Cathodoluminescence of rare earth implanted Ga2O3 and GeO2 nanostructures  Full Text
AUTHORS: Nogales, E; Hidalgo, P; Lorenz, K ; Mendez, B; Piqueras, J; Alves, E ;
PUBLISHED: 2011, SOURCE: NANOTECHNOLOGY, VOLUME: 22, ISSUE: 28
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25
TITLE: Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination
AUTHORS: Peres, M; Magalhaes, S; Fellmann, V; Daudin, B; Neves, AJ ; Alves, E ; Lorenz, K ; Monteiro, T ;
PUBLISHED: 2011, SOURCE: NANOSCALE RESEARCH LETTERS, VOLUME: 6, ISSUE: 1
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26
TITLE: Free electron properties and hydrogen in InN grown by MOVPE  Full Text
AUTHORS: Darakchieva, V; Y Xie; Rogalla, D; W Becker; Lorenz, K ; Alves, E ; Ruffenach, S; Moret, M; Briot, O;
PUBLISHED: 2011, SOURCE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 208, ISSUE: 5
INDEXED IN: Scopus WOS CrossRef
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27
TITLE: Hydrogen In Group-III Nitrides: An Ion Beam Analysis Study  Full Text
AUTHORS: Lorenz, K ; Miranda, SMC; Barradas, NP ; Alves, E ; Nanishi, Y; Schaff, WJ; Tu, LW; Darakchieva, V; Floyd D McDaniel; Barney L Doyle;
PUBLISHED: 2011, SOURCE: 21st International Conference on Application of Accelerators in Research and Industry (CAARI) in APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: TWENTY-FIRST INTERNATIONAL CONFERENCE, VOLUME: 1336
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
28
TITLE: Implanted impurities in wide band gap semiconductors
AUTHORS: Kessler, P; Lorenz, K ; Vianden, R;
PUBLISHED: 2011, SOURCE: Defect and Diffusion Forum, VOLUME: 311
INDEXED IN: Scopus
IN MY: ORCID
29
TITLE: Mechanisms of damage formation in Eu-implanted GaN probed by X-ray diffraction
AUTHORS: Lacroix, B; Leclerc, S; Declemy, A; Lorenz, K ; Alves, E ; Ruterana, P;
PUBLISHED: 2011, SOURCE: EPL, VOLUME: 96, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
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30
TITLE: Radiation damage formation and annealing in GaN and ZnO
AUTHORS: Lorenz, K ; Peres, M; Franco, N; Marques, JG ; Miranda, SMC; Magalhaes, S; Monteiro, T ; Wesch, W; Alves, E ; Wendler, E;
PUBLISHED: 2011, SOURCE: Conference on Oxide-based Materials and Devices II in OXIDE-BASED MATERIALS AND DEVICES II, VOLUME: 7940
INDEXED IN: Scopus WOS
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Page 3 of 13. Total results: 129.

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