Katharina Lorenz


AuthID: R-000-90E

Confirmed Publications: 129



61
TITLE: Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers  Full Text
AUTHORS: Tasco, V; Campa, A; Tarantini, I; Passaseo, A; Gonzalez Posada, F; Redondo Cubero, A ; Lorenz, K ; Franco, N; Munoz, E;
PUBLISHED: 2009, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 105, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
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62
TITLE: Lattice location and annealing studies of Hf implanted CaF2  Full Text
AUTHORS: Thomas Geruschke; Katharina Lorenz ; Eduardo Alves ; Reiner Vianden;
PUBLISHED: 2009, SOURCE: 16th International Conference on Ion Beam Modification of Materials in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 267, ISSUE: 8-9
INDEXED IN: Scopus WOS CrossRef
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63
TITLE: Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range
AUTHORS: Wang, K; O'Donnell, KP; Hourahine, B; Martin, RW; Watson, IM; Lorenz, K ; Alves, E ;
PUBLISHED: 2009, SOURCE: PHYSICAL REVIEW B, VOLUME: 80, ISSUE: 12
INDEXED IN: Scopus WOS CrossRef
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64
TITLE: Optical and structural properties of Eu-implanted InxAl1-xN  Full Text
AUTHORS: Roqan, IS; O'Donnell, KP; Martin, RW; Trager Cowan, C; Matias, V; Vantomme, A; Lorenz, K ; Alves, E ; Watson, IM;
PUBLISHED: 2009, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 106, ISSUE: 8
INDEXED IN: Scopus WOS
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65
TITLE: Optically active centers in Eu implanted, Eu in situ doped GaN, and Eu doped GaN quantum dots  Full Text
AUTHORS: Bodiou, L; Braud, A; L Doualan; Moncorge, R; Park, JH; Munasinghe, C; Steckl, AJ; Lorenz, K ; Alves, E ; Daudin, B;
PUBLISHED: 2009, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 105, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
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66
TITLE: Radiation damage in ZnO ion implanted at 15 K  Full Text
AUTHORS: Wendler, E; Bilani, O; Gaertner, K; Wesch, W; Hayes, M; Auret, FD; Lorenz, K ; Alves, E ;
PUBLISHED: 2009, SOURCE: 23rd International Conference on Atomic Collisions in Solids in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 267, ISSUE: 16
INDEXED IN: Scopus WOS CrossRef
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67
TITLE: Role of impurities and dislocations for the unintentional n-type conductivity in InN  Full Text
AUTHORS: Darakchieva, V; Barradas, NP ; Y Xie; Lorenz, K ; Alves, E ; Schubert, M; Persson, POA; Giuliani, F; Munnik, F; Hsiao, CL; Tu, LW; Schaff, WJ;
PUBLISHED: 2009, SOURCE: 3rd South African Conference on Photonic Materials in PHYSICA B-CONDENSED MATTER, VOLUME: 404, ISSUE: 22
INDEXED IN: Scopus WOS CrossRef
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68
TITLE: Stable In-defect complexes in GaN and AlN  Full Text
AUTHORS: Schmitz, J; Niederhausen, J; Penner, J; Lorenz, K ; Alves, E ; Vianden, R;
PUBLISHED: 2009, SOURCE: 25th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 404, ISSUE: 23-24
INDEXED IN: Scopus WOS CrossRef
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69
TITLE: Structural and optical characterization of Eu-implanted GaN  Full Text
AUTHORS: Lorenz, K ; Barradas, NP ; Alves, E ; Roqan, IS; Nogales, E; Martin, RW; O'Donnell, KP; Gloux, F; Ruterana, P;
PUBLISHED: 2009, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 42, ISSUE: 16
INDEXED IN: Scopus WOS CrossRef
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70
TITLE: A comparative investigation of the damage build-up in GaN and Si during rare earth ion implantation  Full Text
AUTHORS: Florence Gloux; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLISHED: 2008, SOURCE: 2nd Workshop on Impurity Based Electroluminescent Devices and Materials (IBEDM 2006) in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 205, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef
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Page 7 of 13. Total results: 129.

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